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BCR10PNB6327XT Image

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Mfr. #:
BCR10PNB6327XT
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Array - Pre-Biased 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
Transistor Type 1 NPN, 1 PNP - Pre-biased (Dual)
Current - Collector (Ic) (max) 100mA
Voltage - Collector Emitter Breakdown (max) 50V
Resistor - Base (R1) 10 kiloohm
Resistor - Emitter (R2) 10 kiloohm
DC Current Gain (hFE) (min) at Ic, Vce 30 @ 5mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (max) -
Frequency - Transition 130MHz
Power-Max 250mW
Mounting Type Surface Mount
Package/Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
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