LOGO
LOGO
MMBTA14LT1HTSA1 Image

img for reference only

Mfr. #:
MMBTA14LT1HTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single NPN - Darlington 30 V 300 mA 125MHz 330 mW Surface Mount PG-SOT23
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
-
Tape and Reel (TR)
Not for New Designs
Transistor Type NPN - Darlington
Current - Collector (Ic) (max) 300 mA
Voltage - Collector Emitter Breakdown (max) 30 V
Vce Saturation Voltage Drop at Different Ib, Ic (max) 1.5V @ 100μA, 100mA
Current - Collector Cutoff (max) 100nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min) 20000 @ 100mA, 5V
Power - max 330 mW
Frequency - Transition 125MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
MMBTA14
Related models
  • S29AL016J70BFI010

    Flash, Parallel NOR, 16 Mbit, 2M x 8bit, CFI, Parallel, FBGA, 48 pins

  • CY62167EV30LL-45ZXA

    SRAM, MoBL?, Asynchronous SRAM, 16 Mbit, 2M x 8 bits/ 1M x 16 bits, TSOP-I, 48 pins, 2.2 V

  • S29GL128P90TFIR20

    Flash, Parallel NOR, 128 Mbit, 16M x 8bit/ 8M x 16bit, CFI, TSOP, 56 pins

  • S29GL01GS11DHI020

    Flash, NOR, Parallel NOR, 1 Gbit, 64M x 16 bits, Parallel port, FBGA, 64 pins

  • CY62168EV30LL-45BVXI

    SRAM, Asynchronous SRAM, 16 Mbit, 2M x 8bit, VFBGA, 48 pins, 3.6 V

  • CY7C1472BV33-167AXI

    SRAM, NoBL? Architecture, Pipeline SRAM, 72 Mbit, 4M x 18 bits, TQFP, 100 pins, 3.135 V

  • CY14B108N-BA25XI

    Non-Volatile SRAM (NVSRAM), 8Mbit, 512K x 16 bits, 25ns Read/Write, Parallel, 2.7V to 3.6V, FBGA-48

  • S29GL256P11TFI020

    Flash, MirrorBit Architecture, Parallel NOR, 256 Mbit, 32M x 8 bits, CFI, Parallel, TSOP, 56 pins

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd