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IGT60R190D1SATMA1 Image

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Mfr. #:
IGT60R190D1SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 600 V 12.5A (Tc) 55, 5W (Tc) PG-HSOF-8-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolGaN?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 12.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min) -
On-Resistance (Max) at Different Id, Vgs -
Vgs(th) (Max) at Different Id 1,6V @ 960μA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) at Different Vds 157 pF @ 400 V
FET Function -
Power dissipation (max) 55,5W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOF-8-3
Package/case 8-PowerSFN
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