LOGO
LOGO
BFP 740FESD H6327 Image

img for reference only

Mfr. #:
BFP 740FESD H6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Radio Frequency (RF) Bipolar Transistor RF BI
Datasheet:
In Stock:
3130
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Series BFP740
Transistor Type Bipolar
Technology SiGe
Transistor Polarity NPN
Operating Frequency 47 GHz
DC Collector/Base Gain hfe Min 160
Collector-Emitter Maximum Voltage VCEO 4.2 V
Emitter-Base Voltage VEBO
Collector Continuous Current 45 mA
Minimum Operating Temperature
Maximum Operating Temperature
Configuration Single
Mounting Style SMD/SMT
Package/Case TSFP-4
Qualification
Package Reel, Cut Tape, MouseReel
Related models
  • SPB100N03S203T

    Surface mount N channel 30 V 100A (Tc) 300W (Tc) PG-TO263-3-2

  • IRF540NLPBF

    Through hole N channel 100 V 33A (Tc) 130W (Tc) TO-262

  • FS3L40R07W2H5FB11BOMA1

    IGBT module Trench type field stop three-phase inverter 650 V 40 A 20 mW Base installation AG-EASY2B-2

  • F433MR12W1M1HB76BPSA1

    IGBT Modules

  • FS35R12KE3GBPSA1

    IGBT Module Full Bridge Inverter 1200 V 55 A 200 W Chassis Mount AG-ECONO2B

  • FS75R07N2E4BPSA1

    IGBT Module Trench Type Field Stop Three Phase Inverter 650 V 75 A 250 W Base Mount AG-ECONO2B

  • FS50R12KT4B11BPSA1

    IGBT Module Trench Type Field Stop Three Phase Inverter 1200 V 50 A 280 W Base Mount AG-ECONO2B

  • FP50R07N2E4B11BPSA1

    IGBT Module Trench Type Field Stop Three Phase Inverter 650 V 70 A 20 mW Base Mount AG-ECONO2B

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd