LOGO
LOGO
DD230S26KHPSA1 Image

img for reference only

Mfr. #:
DD230S26KHPSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Diode array 1 pair in series standard 2600 V 261A Base mount module
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Bulk
Diode Configuration 1 Pair in Series
Diode Type Standard
Voltage - DC Reverse (Vr) (max) 2600 V
Current - Average Rectified (Io) (per diode) 261A
Voltage - Forward (Vf) at Different If 1.74 V @ 800 A
Speed Standard Recovery>500ns,> 200mA (Io)
Current - Reverse Leakage at Different Vr 160 mA @ 2600 V
Operating Temperature - Junction -40°C ~ 150°C
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Related models
  • IRF7907TRPBF

    Dual MOSFET, N-channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm

  • IRFR1018ETRPBF

    Power MOSFET, N-Channel, 60 V, 79 A, ​​0.0071 ohm, TO-252AA, Surface Mount

  • BSL308CH6327XTSA1

    Dual MOSFET, Complementary N and P channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

  • IRFH7932TRPBF

    Power MOSFET, HEXFET?, N-Channel, 30 V, 25 A, 0.0025 ohm, QFN, Surface Mount

  • IRF3808STRLPBF

    Power MOSFET, N-Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount

  • IPD60R400CEAUMA1

    Power MOSFET, N-channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPU60R2K1CEAKMA1

    Power MOSFET, N-channel, 600 V, 3.7 A, 1.8 ohm, TO-251, Through Hole

  • IPB60R120P7ATMA1

    Power MOSFET, N-Channel, 600 V, 26 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd