LOGO
LOGO
SMBTA 06UPN E6327 Image

img for reference only

Mfr. #:
SMBTA 06UPN E6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN / PNP Silicon AF TRANSISTOR ARRAY
Datasheet:
In Stock:
6680
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case SC-74-6
Transistor Polarity NPN, PNP
Configuration Dual
Maximum DC Collector Current 500 mA
Collector-Emitter Maximum Voltage VCEO 80 V
Collector-Base Voltage VCBO 80 V
Emitter-Base Voltage VEBO 4 V
Collector-Emitter Saturation Voltage 250 mV
Pd-Power Dissipation 330 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature 150 C
Qualification
Series SMBTA06
Package Reel, Cut Tape, MouseReel
Related models
  • IRF8302MTRPBF

    Power MOSFET, N-Channel, 30 V, 190 A, 0.0014 ohm, WDSON, SMT

  • IRFU5410PBF

    Power MOSFET, P-Channel, 100 V, 13 A, 0.205 ohm, TO-251AA, Through Hole

  • IPN80R600P7ATMA1

    Power MOSFET, N-Channel, 800 V, 8 A, 0.51 ohm, SOT-223, Surface Mount

  • BSC070N10LS5ATMA1

    Power MOSFET, N-Channel, 100 V, 79 A, ​​0.006 ohm, TDSON, Surface Mount

  • IPZ60R099C7XKSA1

    Power MOSFET, N-Channel, 600 V, 22 A, 0.085 ohm, TO-247, Through Hole

  • IPB60R145CFD7ATMA1

    Power MOSFET, N-Channel, 600 V, 16 A, 0.127 ohm, TO-263 (D2PAK), Surface Mount

  • IPAN60R600P7SXKSA1

    Power MOSFET, N-channel, 600 V, 6 A, 0.49 ohm, TO-220FP, Through Hole

  • IPD35N12S3L24ATMA1

    Power MOSFET, N-Channel, 120 V, 35 A, 0.02 ohm, TO-252 (DPAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd