LOGO
LOGO
FF750R17ME7DB11BPSA1 Image

img for reference only

Mfr. #:
FF750R17ME7DB11BPSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Modules
Datasheet:
In Stock:
4
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Dual
Collector-Emitter Maximum Voltage VCEO 1700 V
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 750 A
Gate-Emitter Leakage Current 100 nA
Pd-Power Dissipation -
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 175 C
Qualification
Package Tray
Related models
  • BBY 52-02W E6327

    Variable Reactor Single Channel 7 V Surface Mount Type SCD-80

  • BBY5302LE6327XTMA1

    Variable Reactor Single Channel 6 V Surface Mount Type PG-TSLP-2-1

  • BBY 53-02V E6327

    Variable Reactor Single Channel 6 V Surface Mount Type PG-SC79-2

  • BBY 53-02W E6327

    Variable Reactor Single Channel 6 V Surface Mount Type SCD-80

  • BBY 53-03LRH E6327

    Variable Reactor Single Channel 6 V Surface Mount Type PG-TSLP-3-1

  • BBY 53 E6327

    Variable Reactor 1 Pair Common Cathode 6 V Surface Mount Type PG-SOT23

  • BBY 55-02V E6327

    Variable Reactor Single Channel 16 V Surface Mount Type PG-SC79-2

  • BBY 55-02W E6327

    Variable Reactor Single Channel 16 V Surface Mount Type SCD-80

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd