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BSM100GB120DN2 Image

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Mfr. #:
BSM100GB120DN2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module 1200V 100A DUAL
Datasheet:
In Stock:
12
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Half Bridge
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 150 A
Gate-Emitter Leakage Current 200 nA
Pd-Power Dissipation 800 W
Package/Case Half Bridge2
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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