LOGO
LOGO
FP75R12KT4_B15 Image

img for reference only

Mfr. #:
FP75R12KT4_B15
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module IGBT 1200V 75A
Datasheet:
In Stock:
8
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration 3-Phase Inverter
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 1.85 V
Continuous Collector Current at 25 C 75 A
Gate-Emitter Leakage Current 100 nA
Pd-Power Dissipation 385 W
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
Related models
  • IRFB4127PBF

    Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB

  • IRFB4137PBF

    Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB

  • IRFB4227PBF

    Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB

  • IRFB4228PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

  • IRFB4229PBF

    Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB

  • IRFB4310PBF

    Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB

  • IRFB4310ZPBF

    Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB

  • IRFB4321PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd