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FP100R07N3E4_B11 Image

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Mfr. #:
FP100R07N3E4_B11
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT ModuleIGBT Module 100A 650V
Datasheet:
In Stock:
7
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration 3-Phase Inverter
Collector-Emitter Maximum Voltage VCEO 650 V
Collector-Emitter Saturation Voltage 1.55 V
Continuous Collector Current at 25 C 100 A
Gate-Emitter Leakage Current 400 nA
Pd-Power Dissipation 335 W
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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