LOGO
LOGO
FD300R12KS4_B5 Image

img for reference only

Mfr. #:
FD300R12KS4_B5
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module IGBT 1200V 300A
Datasheet:
In Stock:
10
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Single
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 3.2 V
Continuous Collector Current at 25 C 370 A
Gate-Emitter Leakage Current 400 nA
Pd-Power Dissipation 1950 W
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 125 C
Qualification
Package Tray
Related models
  • IPB024N10N5ATMA1

    Surface mount N channel 100 V 180A (Tc) 250W (Tc) PG-TO263-7

  • IPB65R115CFD7AATMA1

    Surface mount N channel 650 V 21A (Tc) 114W (Tc) PG-TO263-3

  • IRFP7537PBF

    Through Hole N Channel 60 V 172A (Tc) 230W (Tc) TO-247

  • IPP65R190CFD7XKSA1

    Through hole N channel 650 V 17.5A (Tc) 151W (Tc) PG-TO220-3

  • BSO150N03MDGXUMA1

    MOSFET - Array 2 N-Channel (Dual) 30V 8A 1.4W Surface Mount PG-DSO-8

  • IPG20N10S4L35ATMA1

    MOSFET - Array 2 N-Channel (Dual) 100V 20A 43W Surface Mount PG-TDSON-8-4

  • AUIRF7316QTR

    MOSFET - Array 2 P-Channel (Dual) 30V 2W Surface Mount 8-SOIC

  • IPA60R199CPXKSA1

    Through hole N channel 650 V 16A (Tc) 34W (Tc) PG-TO220-3-31

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd