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FF600R12ME4B72BOSA1 Image

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Mfr. #:
FF600R12ME4B72BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT MODULE MEDIUM POWER ECONO
Datasheet:
In Stock:
9
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Dual
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 1.75 V
Continuous Collector Current at 25 C 600 A
Gate-Emitter Leakage Current 400 nA
Pd-Power Dissipation -
Package/Case 152 mm x 62.5 mm x 20.8 mm
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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