LOGO
LOGO
DF75R12W1H4F_B11 Image

img for reference only

Mfr. #:
DF75R12W1H4F_B11
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module LOW POWER EASY
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Carbide Modules
Configuration Single
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 2.1 V
Continuous Collector Current at 25 C 75 A
Gate-Emitter Leakage Current 100 nA
Pd-Power Dissipation -
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd