LOGO
LOGO
IPP410N30NAKSA1 Image

img for reference only

Mfr. #:
IPP410N30NAKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET MV POWER MOS
Datasheet:
In Stock:
775
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 300 V
Id-Continuous Drain Current 44 A
Rds On-Drain-Source On-Resistance 41 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 2 V
Qg-Gate Charge 65 ​​nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 300 W
Channel Mode Enhancement
Qualification
Trade Name OptiMOS
Package Tube
Related models
  • 2ED2304S06FXLLA1

    Half-bridge Gate Driver IC CMOS PG-DSO-8-910

  • IR2235JTRPBF

    Half-Bridge Gate Driver IC Inverting 44-PLCC, 32 Leads (16.58x16.58)

  • 1EDN7116GXTMA1

    High-side or low-side gate driver IC Non-inverting PG-VSON-10-4

  • IR21531DPBF

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

  • IR4427PBF

    Low Side Gate Driver IC Non-Inverting 8-PDIP

  • 1EDN7146GXTMA1

    High-side or low-side gate driver IC Non-inverting PG-VSON-10-4

  • IR2302SPBF

    Half-bridge Gate Driver IC Non-Inverting 8-SOIC

  • IR21531PBF

    Half-bridge Gate Driver IC RC Input Circuit 8-PDIP

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd