LOGO
LOGO
BSZ019N03LSATMA1 Image

img for reference only

Mfr. #:
BSZ019N03LSATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Datasheet:
In Stock:
17322
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case TSDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 30 V
Id-Continuous Drain Current 149 A
Rds On-Drain-Source On-Resistance 2 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 2 V
Qg-Gate Charge 44 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 69 W
Channel Mode Enhancement
Qualification
Trade Name OptiMOS
Package Reel, Cut Tape, MouseReel
Related models
  • IPZ65R045C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4

  • IPZ65R065C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4

  • IPZ65R095C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4

  • IRF6645TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET

  • IRF6646TRPBF

    Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET

  • IRF6648TRPBF

    Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET

  • IRF6655TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET

  • IRF6665TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd