IMZ120R350M1HXKSA1 Infineon | Infineon agency

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Mfr. #：

IMZ120R350M1HXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET SIC DISCRETE

Datasheet:

In Stock:

401

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	SiC
Mounting Style	Through Hole
Package/Case	TO-247-4
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	1.2 kV
Id-Continuous Drain Current	4.7 A
Rds On-Drain-Source On-Resistance	350 mOhms
Vgs - Gate-Source Voltage	- 7 V, 23 V
Vgs th-Gate-Source Threshold Voltage	5.7 V
Qg-Gate Charge	5.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	60 W
Channel Mode	Enhancement
Qualification
Trade Name	CoolSiC
Package	Tube

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