IRF4104SPBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRF4104SPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET 40V 1 N-CH HEXFET 5.5mOhms 68nC

Datasheet:

In Stock:

646

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	SMD/SMT
Package/Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	40 V
Id-Continuous Drain Current	120 A
Rds On-Drain-Source On-Resistance	5.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	4 V
Qg-Gate Charge	68 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	175 C
Pd-Power Dissipation	140 W
Channel Mode	Enhancement
Qualification
Trade Name
Package	Tube

IRF1404LPBF

Power MOSFET, N-Channel, 40 V, 162 A, 0.0035 ohm, TO-262, Through Hole
BSC032NE2LSATMA1

Power MOSFET, N-Channel, 25 V, 84 A, 0.0027 ohm, TDSON, SMT
IRF6643TRPBF

Power MOSFET, N-Channel, 150 V, 35 A, 0.029 ohm, DirectFET MZ, Surface Mount
IPL65R230C7AUMA1

Power MOSFET, N-Channel, 650 V, 10 A, 0.204 ohm, VSON, Surface Mount
IPA60R1K0CEXKSA1

Power MOSFET, N-Channel, 650 V, 6.8 A, 0.86 ohm, TO-220FP, Through Hole
BSO040N03MSGXUMA1

Power MOSFET, N-Channel, 30 V, 16 A, 0.0033 ohm, SOIC, Surface Mount
IPB60R060P7ATMA1

Power MOSFET, N-Channel, 600 V, 48 A, 0.049 ohm, TO-263 (D2PAK), Surface Mount
IPP037N06L3GXKSA1

Power MOSFET, N-Channel, 60 V, 90 A, 0.003 ohm, TO-220, Through Hole