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IPDD60R190G7XTMA1 Image

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Mfr. #:
IPDD60R190G7XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET HIGH POWER_NEW
Datasheet:
In Stock:
1716
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case HDSOP-10
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 600 V
Id-Continuous Drain Current 13 A
Rds On-Drain-Source On-Resistance 190 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3 V
Qg-Gate Charge 18 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 76 W
Channel Mode Enhancement
Qualification
Trade Name
Packaging Reel, Cut Tape
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