IPA65R1K5CEXKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPA65R1K5CEXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET CONSUMER

Datasheet:

In Stock:

290

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	650 V
Id-Continuous Drain Current	5.2 A
Rds On-Drain-Source On-Resistance	3.28 Ohms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	3 V
Qg-Gate Charge	10.5 nC
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	53 W
Channel Mode	Enhancement
Qualification
Trade Name	CoolMOS
Package	Tube

IPTG039N15NM5ATMA1

Power MOSFET, N-Channel, 150 V, 190 A, 0.0035 ohm, HSOG, Surface Mount
IPD052N10NF2SATMA1

Power MOSFET, N-Channel, 100 V, 118 A, 0.0044 ohm, TO-252 (DPAK), Surface Mount
IPTC014N10NM5ATMA1

Power MOSFET, N-Channel, 100 V, 365 A, 0.0013 ohm, HDSOP, Surface Mount
IPB043N10NF2SATMA1

Power MOSFET, N-Channel, 100 V, 135 A, 0.0038 ohm, TO-263 (D2PAK), Surface Mount
IPTC039N15NM5ATMA1

Power MOSFET, N-Channel, 150 V, 190 A, 0.0035 ohm, HDSOP, Surface Mount
IPDQ60R017S7AXTMA1

Power MOSFET, N-Channel, 600 V, 30 A, 0.015 ohm, HDSOP, Surface Mount
IPT65R080CFD7XTMA1

Power MOSFET, N-Channel, 650 V, 34 A, 0.067 ohm, HSOF, Surface Mount
IPDQ60R040S7AXTMA1

Power MOSFET, N-Channel, 600 V, 14 A, 0.036 ohm, HDSOP, Surface Mount