LOGO
LOGO
CY7C1168KV18-550BZXC Image

img for reference only

Mfr. #:
CY7C1168KV18-550BZXC
Mfr.:
Infineon Technologies
Batch:
23+
Description:
SRAM 18MB (1Mx18) 1.8v 550MHz DDR II SRAM
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Memory Capacity 18 Mbit
Organization 1 M x 8
Access Time 450 ps
Maximum Clock Frequency 550 MHz
Interface Type Parallel
Supply Voltage—Max 1.9 V
Supply Voltage—Min 1.7 V
Supply Current—Max 650 mA
Minimum Operating Temperature 0 C
Maximum Operating Temperature 70 C
Mounting Style SMD/SMT
Package/Case FBGA-165
Qualification
Package Tray
Related models
  • IAUC120N04S6N009ATMA1

    Power MOSFET, N-channel, 40 V, 120 A, 750 μohm, TDSON, SMT

  • IRF3415PBF

    Power MOSFET, N-Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

  • IRLML2803TRPBF

    Power MOSFET, N-Channel, 30 V, 850 mA, 0.3 ohm, SOT-23, Surface Mount

  • IPD90P03P4L04ATMA1

    Power MOSFET, P-Channel, 30 V, 90 A, 0.0033 ohm, TO-252 (DPAK), Surface Mount

  • IPD60R380C6ATMA1

    Power MOSFET, N-channel, 600 V, 10.6 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPD30N10S3L34ATMA1

    Power MOSFET, N-Channel, 100 V, 30 A, 0.0258 ohm, TO-252 (DPAK), Surface Mount

  • BSZ900N15NS3GATMA1

    Power MOSFET, N-Channel, 150 V, 13 A, 0.074 ohm, TSDSON, Surface Mount

  • IRLL024NTRPBF

    Power MOSFET, N-Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd