LOGO
LOGO
IPD30N10S3L34ATMA1 Image

img for reference only

Mfr. #:
IPD30N10S3L34ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Power MOSFET, N-Channel, 100 V, 30 A, 0.0258 ohm, TO-252 (DPAK), Surface Mount
Datasheet:
In Stock:
28997
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N channel
Drain-source voltage, Vds 100V
Current, Id continuous 30A
Drain-source on-state resistance 0.0258ohm
Related models
  • IKFW50N65DH5XKSA1

    IGBT Trench 650 V 59 A 124 W Through Hole PG-HSIP247-3-2

  • IGZ75N65H5XKSA1

    IGBT Trench 650 V 119 A 395 W Through Hole PG-TO247-4

  • IGW50N65H5AXKSA1

    IGBT Trench 650 V 80 A 270 W Through Hole PG-TO247-3

  • CY23EP05SXC-1H

    Fanout Buffer (Distribution), Zero Delay Buffer IC 200MHz, 220MHz 1 8-SOIC (0.154", 3.90mm Width)

  • SGW30N60FKSA1

    IGBT NPT 600 V 41 A 250 W Through hole PG-TO247-3-1

  • AUIRGP4062D1

    IGBT Trench 600 V 55 A 217 W Through Hole TO-247AC

  • CY23EP05SXC-1HT

    Fanout Buffer (Distribution), Zero Delay Buffer IC 200MHz, 220MHz 1 8-SOIC (0.154", 3.90mm Width)

  • AUIRGP4062D1-E

    IGBT Trench 600 V 55 A 217 W Through Hole TO-247AD

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd