LOGO
LOGO
IPAN60R360PFD7SXKSA1 Image

img for reference only

Mfr. #:
IPAN60R360PFD7SXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Power MOSFET, N-Channel, 600 V, 10 A, 0.303 ohm, TO-220FP, Through Hole
Datasheet:
In Stock:
38
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N channel
Drain-source voltage, Vds 600V
Current, Id continuous 10A
Drain-source on-state resistance 0.303ohm
Related models
  • SMBD7000E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • SMBD 7000 E6327

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • MMBD914LT1XT

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.25A

  • MMBD7000LT1XT

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • BAV 70S H6327

    Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR

  • BAS16E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A

  • BAW101E6327HTSA1

    Diode - General Purpose, Power, Switching 300 V 250 mA

  • BAV70E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 85V 0.2A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd