LOGO
LOGO
IPB123N10N3GATMA1 Image

img for reference only

Mfr. #:
IPB123N10N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Power MOSFET, N-Channel, 100 V, 58 A, 0.0107 ohm, TO-263 (D2PAK), Surface Mount
Datasheet:
In Stock:
377
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Channel type N channel
Drain-source voltage, Vds 100V
Current, Id continuous 58A
Drain-source on-state resistance 0.0107ohm
Related models
  • CY7C1312KV18-250BZI

    IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC

  • CY7C1049GN30-10VXI

    IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; -40÷85°C

  • CY7C1049GN30-10VXIT

    IC: SRAM memory; 4MbSRAM; 512kx8bit; 10ns; SOJ36; parallel; -40÷85°C

  • CY7C1325G-133AXC

    IC: SRAM memory; 4MbSRAM; 256kx18bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC

  • CY7C1051H30-10BVXI

    IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel; -40÷85°C

  • CY7C1051H30-10ZSXI

    IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; TSOP44 II; parallel; -40÷85°C

  • CY7C1051H30-10BVXIT

    IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel; -40÷85°C

  • CY7C1051H30-10ZSXIT

    IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; TSOP44 II; parallel; -40÷85°C

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd