LOGO
LOGO
FS100R12KT4GBOSA1 Image

img for reference only

Mfr. #:
FS100R12KT4GBOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module, Six Groups [Full Bridge], 100 A, 1.75 V, 515 W, 150 °C, Module
Datasheet:
In Stock:
20
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Continuous collector current -
Collector-emitter saturation voltage 1.75V
Power dissipation 515W
Maximum collector-emitter voltage 1.2kV
Related models
  • TLE4999C4HALA1

    Infineon Hall Effect Sensor, 2.2 V Supply

  • TLE4945LHALA1

    Infineon Hall Effect Sensor, Open Collector Output, Through Hole Mount, 24 V Power Supply

  • TLE4966V1GHTSA1

    Infineon Hall Effect Sensor, PNP Output, Flat, SMD/SMT, 3.5 →32 V Supply

  • TLE49452LHALA1

    Infineon Hall Effect Sensor, Open Collector Output, Through Hole Mount, 24 V Power Supply

  • TLE4946KHTSA1

    Infineon, Hall Effect Sensor, Surface Mount, Maximum Operating Temperature 150 °C

  • PVG612SPBF

    Infineon Solid State Relay, PVG612 Series, Surface Mount, Max Load Current 2 A, Max Load Voltage 60 V

  • PVG612PBF

    Infineon Solid State Relay, PVG612 Series, PCB Mount, Max Load Current 2 A, Max Load Voltage 60 V

  • SLB9645TT12FW13333XUMA2

    Infineon encryption authentication chip I2C interface 6kB memory, package type TSSOP-28, 28 pins

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd