LOGO
LOGO
IDB30E60ATMA1 Image

img for reference only

Mfr. #:
IDB30E60ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Standard Recovery Diode, 600 V, 52.3 A, Single, 2 V, 126 ns, 117 A
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Repetitive peak reverse voltage 600V
Average forward current 52.3A
Diode configuration Single
Diode package type TO-263 (D2PAK)
Related models
  • S29AL016J70BFI010

    Flash, Parallel NOR, 16 Mbit, 2M x 8bit, CFI, Parallel, FBGA, 48 pins

  • CY62167EV30LL-45ZXA

    SRAM, MoBL?, Asynchronous SRAM, 16 Mbit, 2M x 8 bits/ 1M x 16 bits, TSOP-I, 48 pins, 2.2 V

  • S29GL128P90TFIR20

    Flash, Parallel NOR, 128 Mbit, 16M x 8bit/ 8M x 16bit, CFI, TSOP, 56 pins

  • S29GL01GS11DHI020

    Flash, NOR, Parallel NOR, 1 Gbit, 64M x 16 bits, Parallel port, FBGA, 64 pins

  • CY62168EV30LL-45BVXI

    SRAM, Asynchronous SRAM, 16 Mbit, 2M x 8bit, VFBGA, 48 pins, 3.6 V

  • CY7C1472BV33-167AXI

    SRAM, NoBL? Architecture, Pipeline SRAM, 72 Mbit, 4M x 18 bits, TQFP, 100 pins, 3.135 V

  • CY14B108N-BA25XI

    Non-Volatile SRAM (NVSRAM), 8Mbit, 512K x 16 bits, 25ns Read/Write, Parallel, 2.7V to 3.6V, FBGA-48

  • S29GL256P11TFI020

    Flash, MirrorBit Architecture, Parallel NOR, 256 Mbit, 32M x 8 bits, CFI, Parallel, TSOP, 56 pins

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd