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F3L300R12ME4_B22 Image

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Mfr. #:
F3L300R12ME4_B22
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT ModuleIGBT Module 300A 1200V
Datasheet:
In Stock:
3
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Modules
Configuration Half Bridge
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 1.75 V
Continuous Collector Current at 25 C 450 A
Gate-Emitter Leakage Current 100 nA
Pd-Power Dissipation 1550 W
Package/Case
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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