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DF160R12W2H3F_B11 Image

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Mfr. #:
DF160R12W2H3F_B11
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module LOW POWER EASY
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product IGBT Silicon Carbide Modules
Configuration Quad
Collector-Emitter Maximum Voltage VCEO 1200 V
Collector-Emitter Saturation Voltage 1.55 V
Continuous Collector Current at 25 C 20 A
Gate-Emitter Leakage Current 100 nA
Pd-Power Dissipation 20 mW
Package/Case Module
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Qualification
Package Tray
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