IPD60R600P7ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPD60R600P7ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET LOW POWER_NEW

Datasheet:

In Stock:

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	SMD/SMT
Package/Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	600 V
Id-Continuous Drain Current	6 A
Rds On-Drain-Source On-Resistance	490 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	3 V
Qg-Gate Charge	9 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	30 W
Channel Mode	Enhancement
Qualification
Trade Name	CoolMOS
Package	Reel, Cut Tape

BCX6810E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6816E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6910E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BDP948E6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4
BDP954E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10
BC857CWE6327BTSA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC857CWE6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC858BWE6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 30 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323