LOGO
LOGO
IRFI4110GPBF Image

img for reference only

Mfr. #:
IRFI4110GPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET MOSFT 9999A
Datasheet:
In Stock:
3063
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 100 V
Id-Continuous Drain Current 72 A
Rds On-Drain-Source On-Resistance 3.7 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 1.8 V
Qg-Gate Charge 190 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 61 W
Channel Mode Enhancement
Qualification
Trade Name
Package Tube
Related models
  • IMBG65R260M1HXTMA1

    SILICON CARBIDE MOSFET PG-TO263-

  • IR2101

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2104

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2106

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2108

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IPP65R155CFD7XKSA1

    Through hole N channel 650 V 15A (Tc) 77W (Tc) PG-TO220-3

  • IR2130STR

    Half-bridge Gate Driver IC Inverter 28-SOIC

  • F4150R12KS4BOSA1

    IGBT Module Three Phase Inverter 1200 V 180 A 960 W Base Mount Module

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd