IPW65R060CFD7XKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPW65R060CFD7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET HIGH POWER_NEW

Datasheet:

In Stock:

480

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	650 V
Id-Continuous Drain Current	36 A
Rds On-Drain-Source On-Resistance	60 mOhms
Vgs - Gate-Source Voltage	- 10 V, 10 V
Vgs th-Gate-Source Threshold Voltage	3.5 V
Qg-Gate Charge	68 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	171 W
Channel Mode	Enhancement
Qualification
Trade Name
Package	Tube

BCX6810E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6816E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6910E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BDP948E6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4
BDP954E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10
BC857CWE6327BTSA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC857CWE6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC858BWE6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 30 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323