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IMW120R007M1HXKSA1 Image

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Mfr. #:
IMW120R007M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET
Datasheet:
In Stock:
179
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology SiC
Mounting Style Through Hole
Package/Case
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 1.2 kV
Id-Continuous Drain Current 225 A
Rds On-Drain-Source On-Resistance 9.9 mOhms
Vgs - Gate-Source Voltage - 5 V, 20 V
Vgs th-Gate-Source Threshold Voltage 5.2 V
Qg-Gate Charge 220 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 750 W
Channel Mode Enhancement
Trade Name
Package Tube
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