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IPB180N06S4H1ATMA2 Image

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Mfr. #:
IPB180N06S4H1ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 60V 180A D2PAK-6
Datasheet:
In Stock:
5861
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case TO-263-7
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 60 V
Id-Continuous Drain Current 180 A
Rds On-Drain-Source On-Resistance 1.7 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3 V
Qg-Gate Charge 270 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 250 W
Channel Mode Enhancement
Qualification AEC-Q101
Trade Name
Package Reel, Cut Tape
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