IPB60R040C7ATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB60R040C7ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET HIGH POWER_NEW

Datasheet:

In Stock:

1050

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	SMD/SMT
Package/Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	600 V
Id-Continuous Drain Current	50 A
Rds On-Drain-Source On-Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	3 V
Qg-Gate Charge	107 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	227 W
Channel Mode	Enhancement
Qualification
Trade Name	CoolMOS
Package	Reel, Cut Tape, MouseReel

IKN06N60RC2ATMA1

IGBT 600 V 8 A 7.2 W Surface mount type PG-SOT223-3
IKD15N60RC2ATMA1

IGBT Trench Field Stop 600 V 28 A 115.4 W Surface Mount PG-TO252-3
IHW30N65R6XKSA1

IGBT 650 V 65 A 163 W Through hole PG-TO247-3
IKWH20N65WR6XKSA1

IGBT Trench Field Stop 650 V 55 A 136 W Through Hole PG-TO247-3-32
IKWH30N65WR6XKSA1

IGBT Trench Field Stop 650 V 67 A 136 W Through Hole PG-TO247-3-32
BC817K16WH6327XTSA1

Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 170MHz 250 mW Surface Mount PG-SOT323
CY22801KFXCT

Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator IC 200MHz 1 8-SOIC (0.154", 3.90mm Width)
CY22392ZXC-398

IC