LOGO
LOGO
IPP020N08N5AKSA1 Image

img for reference only

Mfr. #:
IPP020N08N5AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 80V 120A TO220-3
Datasheet:
In Stock:
235
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 80 V
Id-Continuous Drain Current 120 A
Rds On-Drain-Source On-Resistance 1.8 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 2.2 V
Qg-Gate Charge 223 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 375 W
Channel Mode Enhancement
Qualification
Trade Name OptiMOS
Package Tube
Related models
  • IPDQ60R022S7XTMA1

    Infineon N-channel MOSFET, Vds=600 V, 24 A, PG-HDSOP-22-1, SMD, SMD mounting

  • IPAN60R180P7SXKSA1

    Infineon MOSFET, 18 A, PG-TO220, Through Hole, 3-pin

  • IRFHM9331TRPBF

    Infineon P-channel enhancement mode MOS tube, Vds=30 V, 11 A, PQFN, SMD mount, 8 pins, IRFHM9331TRPBF

  • IRF1104PBF

    Infineon N-channel MOS tube, Vds=40 V, 100 A, TO-220AB, through-hole mounting, IRF1104PBF

  • IPF017N08NF2SATMA1

    Infineon N-channel MOSFET, Vds=80 V, 259 A, PG-TO263-7, SMD mount

  • IRF7854TRPBF

    Infineon N-channel MOS tube, Vds=80 V, 10 A, SO-8, through-hole mounting, IRF7854TRPBF

  • BSZ900N20NS3GATMA1

    Infineon N-channel MOS tube, Vds=200 V, 15.2 A, PG-TSDSON-8, SMD installation

  • IPP013N04NF2SAKMA1

    Infineon N-channel enhancement mode MOS tube, Vds=40 V, 197 A, TO-220, SMD mount, 3 pins

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd