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IRLB3813PBF Image

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Mfr. #:
IRLB3813PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg
Datasheet:
In Stock:
3957
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 30 V
Id-Continuous Drain Current 260 A
Rds On-Drain-Source On-Resistance 1.95 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 1.9 V
Qg-Gate Charge 86 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 230 W
Channel Mode Enhancement
Qualification
Trade Name HEXFET
Package Tube
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