IRF200P223 Infineon | Infineon agency

img for reference only

Mfr. #：

IRF200P223

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET IFX OPTIMOS

Datasheet:

In Stock:

120

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	200 V
Id-Continuous Drain Current	100 A
Rds On-Drain-Source On-Resistance	11.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	2 V
Qg-Gate Charge	102 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	175 C
Pd-Power Dissipation	313 W
Channel Mode	Enhancement
Qualification
Trade Name	StrongIRFET
Package	Tube

TLI4970D025T5XUMA1

Current sensor, SPI, 18 kHz, TISON, 8-pin, 3.1 V, 3.5 V
BSC057N08NS3GATMA1

Power MOSFET, N-Channel, 80 V, 100 A, 0.0047 ohm, TDSON, SMT
IPB120P04P4L03ATMA1

Power MOSFET, P-Channel, 40 V, 120 A, 0.0026 ohm, TO-263 (D2PAK), Surface Mount
IRF7103TRPBF

Dual MOSFET, N-Channel, 50 V, 3 A, 0.11 ohm, SOIC, Surface Mount
IRF9540NPBF

Power MOSFET, P-Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole
IRF4905STRLPBF

Power MOSFET, P-Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount
BSC059N04LSGATMA1

Power MOSFET, N-Channel, 40 V, 73 A, 0.0049 ohm, PG-TDSON, SMT
IRF5210PBF

Power MOSFET, P-Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole