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IPI086N10N3 G Image

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Mfr. #:
IPI086N10N3 G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
Datasheet:
In Stock:
1005
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-262-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 100 V
Id-Continuous Drain Current 80 A
Rds On-Drain-Source On-Resistance 8.2 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 2.7 V
Qg-Gate Charge 55 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 125 W
Channel Mode Enhancement
Qualification
Trade Name OptiMOS
Package Tube
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