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IPP60R190E6 Image

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Mfr. #:
IPP60R190E6
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6
Datasheet:
In Stock:
465
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 600 V
Id-Continuous Drain Current 20.2 A
Rds On-Drain-Source On-Resistance 170 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3.5 V
Qg-Gate Charge 63 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 151 W
Channel Mode Enhancement
Qualification
Trade Name CoolMOS
Package Tube
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