IPW65R099C6 Infineon | Infineon agency

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Mfr. #：

IPW65R099C6

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET N-Ch 700V 38A TO247-3

Datasheet:

In Stock:

181

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology	Si
Mounting Style	Through Hole
Package/Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	650 V
Id-Continuous Drain Current	38 A
Rds On-Drain-Source On-Resistance	89 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	2.5 V
Qg-Gate Charge	127 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	150 C
Pd-Power Dissipation	278 W
Channel Mode	Enhancement
Qualification
Trade Name	CoolMOS
Package	Tube

SGP30N60HSXKSA1

IGBT NPT 600 V 41 A 250 W Through hole PG-TO220-3-1
SGW10N60AFKSA1

IGBT NPT 600 V 20 A 92 W Through hole PG-TO247-3-1
SGW15N120FKSA1

IGBT NPT 1200 V 30 A 198 W Through hole PG-TO247-3-1
IHW40T60FKSA1

IGBT groove-type field as dead as 600 V 80 A 303 W-pass hole PG-TO247-3-1
IHY15N120R3XKSA1

IGBT Trench 1200 V 30 A 254 W Through Hole PG-TO247HC-3
IHY20N120R3XKSA1

IGBT Trench 1200 V 40 A 310 W Through Hole PG-TO247HC-3
BC 846PN H6727

Transistor - Bipolar (BJT) - Array NPN, PNP 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO
BC847SH6359XTMA1

Transistor - Bipolar (BJT) - Array 2 NPN (Dual) 45V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO