LOGO
LOGO
IPAW60R600P7SE8228XKSA1 Image

img for reference only

Mfr. #:
IPAW60R600P7SE8228XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET CONSUMER
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style Through Hole
Package/Case TO-220-3
Transistor Polarity
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 600 V
Id-Continuous Drain Current 6 A
Rds On-Drain-Source On-Resistance 1.149 Ohms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 3.5 V
Qg-Gate Charge 9 nC
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Pd-Power Dissipation 21 W
Channel mode
Qualification
Trade name
Package Tube
Related models
  • SDP10S30

    Diode SiC Schottky 300 V 10A Through Hole PG-TO220-3

  • SDT05S60

    Diode SiC Schottky 600 V 5A Through Hole PG-TO220-2-2

  • SDT08S60

    Diode SiC Schottky 600 V 8A Through Hole PG-TO220-2-2

  • SDT10S60

    Diode SiC Schottky 600 V 10A Through Hole PG-TO220-2-2

  • ESD3V3U4ULCE6327XTSA1

    11V (Standard) Clip 3A (8/20μs) Ipp TVS - Diode Surface Mount Type PG-TSLP-9-1

  • ESD18VU1B-02LRH E6327

    17V (Standard) Clip 2A (8/20μs) Ipp TVS - Diode Surface Mount Type PG-TSLP-2-17

  • ESD18VU1B02LSE6327XTSA1

    17V (Standard) Clip 2A (8/20μs) Ipp TVS - Diode Surface Mount Type PG-TSSLP-2-1

  • ESD24VL1B-02LS E6327

    55V (Standard) Clip 1A (8/20μs) Ipp TVS - Diode Surface Mount Type PG-TSSLP-2-1

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd