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BFP740FESDH6327XTSA1 Image

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Mfr. #:
BFP740FESDH6327XTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon NPN SiGe Bipolar Transistor, TSFP Package, Maximum DC Collector Current 45 mA, Maximum Collector-Emitter Voltage 4.2 V, Surface Mount, Maximum Power Dissipation 160 mW, 4-Pin
Datasheet:
In Stock:
25
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Transistor type NPN
Maximum DC collector current 45 mA
Maximum collector-emitter voltage 4.2 V
Package type TSFP
Mounting type Surface mount
Maximum power dissipation 160 mW
Minimum DC current gain -
Transistor configuration Single
Maximum collector-base voltage 4.9 V
Maximum emitter-base voltage 0.5 V
Maximum operating frequency 47 GHz
Number of pins 4
Number of components per chip 1
Dimensions -
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