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FP50R12KT4B11BOSA1 Image

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Mfr. #:
FP50R12KT4B11BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 1200 V, max 50 A
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 50 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 160 W
Package type ECONO2
Configuration 3-phase bridge
Mounting type PCB (printed circuit board) mounting
Channel type N
Number of pins 23
Switching speed 1MHz
Transistor configuration 3-phase
Dimensions 107.5 x 45 x 17mm
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