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FP35R12W2T4B11BOMA1 Image

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Mfr. #:
FP35R12W2T4B11BOMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 1200 V, max 54 A
Datasheet:
In Stock:
15
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 54 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 215 W
Package type EASY2B
Configuration 3-phase bridge
Mounting type PCB (printed circuit board) mounting
Channel type N
Number of pins 35
Switching speed 1MHz
Transistor configuration 3-phase
Dimensions 56.7 x 48 x 12mm
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