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FF150R12KE3GB2HOSA1 Image

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Mfr. #:
FF150R12KE3GB2HOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 1200 V, max 225 A
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 225 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 780 W
Package type 62MM module
Configuration Serial
Mounting type Panel mount
Channel type N
Number of pins 7
Switching speed 1MHz
Transistor configuration Serial
Dimensions 106.4 x 61.4 x 29mm
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