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F475R12KS4B11BOSA1 Image

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Mfr. #:
F475R12KS4B11BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 1200 V, max 100 A
Datasheet:
In Stock:
10
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 100 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 500 W
Package type ECONO2
Configuration Dual half-bridge
Mounting type PCB (printed circuit board) mounting
Channel type N
Number of pins 24
Switching speed 1MHz
Transistor configuration Dual half-bridge
Dimensions 107.5 x 45 x 17mm
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