FP35R12KT4B11BOSA1 Infineon | Infineon agency

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Mfr. #：

FP35R12KT4B11BOSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Infineon IGBT module, max 1200 V, max 35 A

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Maximum continuous collector current	35 A
Maximum collector-emitter voltage	1200 V
Maximum gate-emitter voltage	±20 V
Number of transistors	-
Maximum power dissipation	210 W
Package type	ECONO2
Configuration	3-phase bridge
Mounting type	PCB (printed circuit board) mounting
Channel type	N
Number of pins	23
Switching speed	1MHz
Transistor configuration	3-phase
Dimensions	107.5 x 45 x 17mm

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