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F475R06W1E3BOMA1 Image

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Mfr. #:
F475R06W1E3BOMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT module, max 600 V, max 100 A
Datasheet:
In Stock:
24
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 100 A
Maximum collector-emitter voltage 600 V
Maximum gate-emitter voltage /-20 V
Number of transistors 4
Maximum power dissipation 275 W
Package type -
Configuration Emitter-collector, quad (2x dual)
Mounting type -
Channel type -
Number of pins -
Switching speed -
Transistor configuration -
Dimensions -
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