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F450R12KS4B11BOSA1 Image

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Mfr. #:
F450R12KS4B11BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT Module N-channel, Dual Half-bridge, 70 A, Vce=1200 V, 24-pin ECONO2 package
Datasheet:
In Stock:
999999
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 70 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 355 W
Package type ECONO2
Configuration Dual half-bridge
Mounting type PCB (printed circuit board) mounting
Channel type N
Number of pins 24
Switching speed 1MHz
Transistor configuration Dual half-bridge
Dimensions 107.5 x 45 x 17mm
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