LOGO
LOGO
IHW30N65R6XKSA1 Image

img for reference only

Mfr. #:
IHW30N65R6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT, max. 650 V, max. 65 A
Datasheet:
In Stock:
240
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 65 ​​A
Maximum collector-emitter voltage 650 V
Maximum gate-emitter voltage ±30 V
Number of transistors -
Maximum power dissipation 160 W
Package type PG-TO247-3
Configuration -
Mounting type -
Channel type -
Number of pins 3
Switching speed -
Transistor configuration -
Dimensions -
Related models
  • CY7C1480BV33-200AXC

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC

  • CY7C1480BV33-250BZI

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 250MHz

  • CY7C1480V33-167AXC

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C; 3.135÷3.6VDC

  • CY7C1481BV33-133AXI

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C; 133MHz

  • CY7C1512KV18-250BZC

    IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; 0÷70°C; 1.7÷1.9VDC

  • CY7C1512KV18-250BZI

    IC: SRAM memory; 72MbSRAM; 4Mx18bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC

  • CY7C1514KV18-250BZI

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC

  • CY7C1515KV18-300BZI

    IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C; 1.7÷1.9VDC

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd