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IKW50N65ES5XKSA1 Image

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Mfr. #:
IKW50N65ES5XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Infineon IGBT, max. 650 V, max. 80 A
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Maximum continuous collector current 80 A
Maximum collector-emitter voltage 650 V
Maximum gate-emitter voltage ±20 V
Number of transistors 1
Maximum power dissipation 274 W
Package type TO-247
Configuration -
Mounting type Through hole
Channel type N
Number of pins 3
Switching speed 30kHz
Transistor configuration Single
Dimensions 16.13 x 5.21 x 21.1mm
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